GJ1202 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

ISSUED DATE :2005/06/07
REVISED DATE :
GJ1202
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GJ1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications.
Features
*Large current capacitance and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-3
A
Collector Current(Pulse)
ICP
-6
A
Junction Temperature
Tj
+150
к
Storage Temperature
TsTG
-55 ~ +150
к
Total Power Dissipation
PD
1
PD(TC=25к)
15
W
W
Electrical Characteristics (Rating at Ta=25к)
Symbol
Min.
Typ.
Max.
BVCBO
-60
-
-
BVCEO
-50
-
-
BVEBO
-6
-
-
ICBO
-
-
-1
IEBO
-
-
-1
*VCE(sat)1
-
-0.35
-0.7
*VBE(sat)
-
-0.94
-1.2
*hFE1
100
-
560
*hFE2
35
-
-
fT
-
150
-
Cob
-
39
-
ton (Turn-On Time)
-
70
-
tstg (Storage Time)
-
450
-
tf (Fall Time)
-
35
-
Classification Of hFE1
Rank
R
Range
100 ~ 200
S
140 ~ 280
Unit
V
V
V
uA
uA
V
V
MHz
pF
ns
ns
ns
Test Conditions
IC=-10uA, IE=0
IC=-1mA, RBE=
IE=-10uA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
lC=-2A, IB=-100mA
lC=-2A, IB=-100mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
T
200 ~ 400
U
280 ~ 560
GJ1202
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