GJ1182 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NP SILICON EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GJ1182
PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Description
The GJ1182 is designed for medium power amplifier applications.
Features
Ô¦Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.40
3.00
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0
0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
к
Storage Temperature
Tstg
-55~+150
к
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-32
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-2
A
Collector Current (Pulse, Pw=100ms)
IC
-3
A
Total Power Dissipation(TC=25к)
PD
10
W
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-50uA , IE=0
BVCEO
-32
-
-
V
IC=-1mA, IB=0
BVEBO
ICBO
-5
-
-
V
IE=-50uA ,IC=0
-
-
-1
uA
VCB=-20V, IE=0
IEBO
-
-
-1
uA
VEB=-4V, IC=0
*VCE(sat)
*hFE
-
-500
-800
mV IC=-2A, IB=-200mA
82
-
390
VCE=-3V, IC=-500mA
fT
-
100
-
MHz VCE=-5V, IC=-500mA, f=100MHz
Cob
-
50
-
pF
VCB=-10V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
GJ1182
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