GISD1804 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

ISSUED DATE :2005/01/13
REVISED DATE :
GISD1804
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GISD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
*Low collector-to-emitter saturation voltage
*High current and high fT
*Excellent linearity of hFE
*Fast switching time
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current(DC)
IC
8
A
Collector Current(Pulse)
IC
12
A
PD
1
W
Collector Dissipation
Tc=25к
20
W
Electrical Characteristics (Ta = 25к unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
60
-
-
V
IC=10uA, IE=0
V(BR)CEO
50
-
-
V
IC=1mA, RBE=Ќ
V(BR)EBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
1
uA
VCB=40V, IE=0
IEBO
-
-
1
uA
VEB=4V, IC=0
VCE(sat)
-
0.2
0.4
V
IC=4A, IB=0.2A
VBE(sat)
-
0.95
1.3
V
IC=4A, IB=0.2A
hFE1
70
-
400
VCE=2V, IC=0.5A
hFE2
35
-
-
VCE=2V, IC=6A
fT
-
180
-
MHZ VCE=5V,IC=1A
tstg
-
500
-
ns
See test circuit
tf
-
20
-
ns
See test circuit
Cob
-
65
-
pF
VCB=10V, f=1MHz
GISD1804
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