GISD1802 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

ISSUED DATE :2005/01/13
REVISED DATE :
GISD1802
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
Features
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
ć
Storage Temperature
Tstg
-55 ~ +150
ć
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current(DC)
IC
3
A
Collector Current(Pulse)
ICP
6
A
Collector Dissipation
PD
Tc=25к
1
20
W
W
Electrical Characteristics (Ta = 25к unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
V(BR)CBO
60
-
-
V
IC=10uA, IE=0
V(BR)CEO
50
-
-
V
IC=1mA, RBE=Ќ
V(BR)EBO
6
-
-
V
IE=10uA, IC=0
ICBO
-
-
1
A
VCB=40V, IE=0
IEBO
-
-
1
A
VEB=4V, IC=0
VCE(sat)
-
0.19
0.5
V
IC=2A, IB=0.1A
VBE(sat)
-
0.94
1.2
V
IC=2A, IB=0.1A
hFE1
100
-
560
VCE=2V, IC=0.1A
hFE2
35
-
-
VCE=2V, IC=3A
fT
-
150
-
MHZ
VCE=10V,IC=50mA
ton
-
70
-
ns
See test circuit
tstg
-
650
-
ns
See test circuit
tf
-
35
-
ns
See test circuit
Cob
-
25
-
pF
VCB=10V, f=1MHz
GISD1802
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