GI965 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/05/12
REVISED DATE :
GI965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GI965 is designed for use as AF output amplifier and flash unit.
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (Continuous)
IC
5
A
Collector Current (Peak PT=10mS)
ICP
8
A
Junction Temperature
Tj
+150
к
Storage Temperature
TsTG
-55 ~ +150
к
Total Power Dissipation
PD
2
W
Electrical Characteristics (Rating at Ta=25к)
Symbol
Min.
Typ.
Max.
BVCBO
40
-
-
BVCEO
20
-
-
BVEBO
7
-
-
ICBO
-
-
100
IEBO
-
-
100
*VCE(sat)
-
350
1000
*hFE1
230
-
800
*hFE2
150
-
-
fT
-
150
-
Cob
-
-
50
Classification Of hFE1
Rank
Q
Range
230 ~ 380
R
340 ~ 600
Unit
V
V
V
nA
nA
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=7V
lC=3A, IB=100mA
VCE=2V, IC=500mA
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
S
560 ~ 800
GI965
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