GI882 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
GI882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GI882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and
relay driver.
Package Dimensions
TO-251
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation(TC=25к)
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
+150
-55~+150
40
30
5
3
7
0.6
10
Unit
ć
ć
V
V
V
A
A
A
W
Electrical Characteristics (Ta = 25ć)
Symbol
Min.
Typ.
Max.
BVCBO
BVCEO
40
-
-
30
-
-
BVEBO
ICBO
5
-
-
-
-
1
IEBO
-
-
1
*VCE(sat)
-
-
0.5
*VBE(sat)
-
1
2
*hFE1
30
-
-
*hFE2
fT
100
-
500
-
90
-
Cob
-
45
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Classification Of hFE2
Rank
Q
Range
100 - 200
P
160 - 320
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
E
250 - 500
GI882
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