GI8050 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

ISSUED DATE :2005/05/06
REVISED DATE :
GI8050
NPN EPITAXIAL TRANSISTOR
Description
The GI8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.
Features
*High Collector current (IC: 1.5A)
*Complementary to GI8550
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Base Current
IB
0.5
A
Junction Temperature
Tj
+150
к
Storage Temperature
TsTG
-55 ~ +150
к
Total Power Dissipation
PD
1.25
W
Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
-
V
IC=100uA
BVCEO
25
-
-
V
IC=2mA
BVEBO
6
-
-
V
IE=100uA
ICBO
-
-
100
nA
VCB=35V
IEBO
-
-
100
nA
VBE=6V
*VCE(sat)
-
-
0.5
V
lC=800mA, IB=80mA
*VBE(sat)
-
-
1.2
V
lC=800mA, IB=80mA
*VBE(on)
-
-
1.0
V
VCE=1V, IC=10mA
*hFE1
45
-
-
VCE=1V, IC=5mA
*hFE2
120
-
500
VCE=1V, IC=100mA
*hFE3
40
-
-
VCE=1V, IC=800mA
fT
100
-
-
MHz VCE=10V, IC=50mA, f=100MHz
Cob
-
9
-
pF
VCB=10V, IE=0, f=1MHz
Classification Of hFE2
Rank
C
D
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
E
Range
120 ~ 200
160 ~ 300
250 ~ 500
GI8050
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