GI5706 Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR SILICON TRANSISTOR

ISSUED DATE :2005/05/06
REVISED DATE :
GI5706
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GI5706 is designed high current switching applications.
Features
*Large current capacitance
*Low collector-to-emitter saturation voltage
*High-speed switching
*High allowable power dissipation
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
80
V
Collector to Emitter Voltage
VCES
80
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
5
A
Collector Current(Pulse)
ICP
7.5
A
Base Current
IB
1.2
A
Junction Temperature
Tj
+150
к
Storage Temperature
TsTG
-55 ~ +150
к
Total Power Dissipation
PD
0.8
PD(TC=25к)
15
W
W
Electrical Characteristics (Rating at Ta=25к)
Symbol
Min.
Typ.
Max.
BVCBO
80
-
-
BVCES
80
-
-
BVCEO
50
-
-
BVEBO
6
-
-
ICBO
-
-
1
IEBO
-
-
1
*VCE(sat)1
-
-
135
*VCE(sat)2
-
-
240
*VBE(sat)
-
-
1.2
*hFE
200
-
560
fT
-
400
-
Cob
-
15
-
ton (Turn-On Time)
-
35
-
tstg (Storage Time)
-
300
-
tf (Fall Time)
-
20
-
Unit
V
V
V
V
uA
uA
mV
mV
V
MHz
pF
ns
ns
ns
Test Conditions
IC=10uA, IE=0
IC=100uA, RBE=0
IC=1mA, RBE=
IE=10uA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
lC=1A, IB=50mA
lC=2A, IB=100mA
lC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
GI5706
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