GI5103 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN HIGH SPEED SWITCHING TRANSISTOR

ISSUED DATE :2005/10/03
REVISED DATE :
GI5103
NPN HIGH SPEED SWITCHING TRANSISTOR
Description
The GI5103 is designed for high speed switching applications.
Features
Ô¦Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A
Ô¦High speed switching, typically tf =0.1 s at IC=3A
Ô¦Wide SOA
Ô¦Complements to GI1952
Package Dimensions
TO-251
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=100ms)
IC
Total Device Dissipation (TA=25к)
PD
Total Device Dissipation (TC=25к)
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
Unit
100
V
60
V
5
V
5
A
10
A
1
W
10
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
100
-
-
V
IC=50uA, IE=0
60
-
-
V
IC=1mA, IB=0
5
-
-
V
IE=50uA, IC=0
-
-
10
uA
VCB=100V, IE=0
-
-
10
uA
VEB=5V, IC=0
-
0.15
0.3
V
IC=3A, IB=0.15A
-
-
0.5
V
IC=4A, IB=0.2A
-
-
1.2
V
IC=3A, IB=0.15A
-
-
1.5
V
IC=4A, IB=0.2A
120
-
270
VCE=2V, IC=1A
40
-
-
VCE=2V, IC=3A
-
210
-
MHz VCB=10V, IE=-0.5A, f=30MHz
-
80
-
pF
VCE=10V, IE=0, f=1MHz
GI5103
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