GI4672 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL SILICON TRANSISTOR

ISSUED DATE :2005/07/15
REVISED DATE :
GI4672
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GI4672 is designed for low frequency amplifier applications.
Features
Ô¦Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA
Ô¦Excellent DC current gain characteristics
Package Dimensions
TO-251
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=10ms)
IC
Total Device Dissipation (TA=25к)
PD
Total Device Dissipation (TC=25к)
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
Unit
60
V
50
V
6
V
2
A
5
A
1.5
W
10
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=50uA, IE=0
BVCEO
50
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=50uA, IC=0
ICBO
IEBO
-
-
100
nA
VCB=60V, IE=0
-
-
100
nA
VEB=5V, IC=0
*VCE(sat)
-
0.1
0.35
V
IC=1A, IB=50mA
*hFE
120
-
400
VCE=2V, IC=500mA
fT
-
210
-
MHz VCE=2V, IE=500mA, f=100MHz
Cob
-
25
-
pF
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE
Rank
Range
A
120 ~ 240
B
200 ~ 400
GI4672
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