GI3669 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2005/08/31
REVISED DATE :2005/11/28B
GI3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GI3669 is designed for using in power amplifier applications, power switching applications.
Package Dimensions
TO-251
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Dissipation (TA=25к)
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
Unit
80
V
80
V
5
V
2
A
1.25
W
150
к
-55 ~ +150
к
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=100uA, IE=0
BVCEO
80
-
-
V
IC=10mA, IB=0
BVEBO
5
-
-
V
IE=100uA, IC=0
ICBO
-
-
1
uA
VCB=80V, IE=0
IEBO
-
-
1
uA
VEB=5V, IC=0
*VCE(sat)
-
0.15
0.5
V
IC=1A, IB=50mA
*VBE(sat)
-
0.9
1.2
V
IC=1A, IB=50mA
*hFE1
70
-
240
VCE=2V, IC=0.5A
*hFE2
40
-
-
VCE=2V, IC=1.5A
fT
-
100
-
MHz VCE=2V, IE=500mA, f=100MHz
Cob
-
30
-
pF
VCB=10V, IE=0, f=1MHz
ton (Turn-On Time)
-
tstg (Storage Time)
-
tf (Fall Time)
-
0.2
-
1.0
-
0.2
-
us
VCC=30V, RL=30 ,
us
IC=1A,
IB1=-IB2=50mA,
us
Duty CycleЉ1%
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Classification Of hFE1
Rank
Range
O
70 ~ 140
Y
120 ~ 240
GI3669
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