GI122 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2004/12/15
REVISED DATE :2005/12/23B
GI122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GI122 is designed for use in general purposes and low speed switching applications.
Features
Ô¦High DC current gain
Ô¦Built-in a damper diode at E-C
Package Dimensions
TO-251
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current
IC
Total Power Dissipation(Tc=25к)
PD
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Ratings
Unit
+150
к
-55 ~ +150
к
100
V
100
V
5
V
5
A
20
W
Electrical Characteristics (Rating at 25к ambient temperature unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=1mA, IE=0
BVCEO
100
-
-
V
IC=30mA, IB=0
BVEBO
5
-
-
V
IE=1mA, IC=0
ICBO
-
-
10
A
VCB=100V, IE=0
ICEO
-
-
10
A
VCE=50V, IB=0
IEBO
-
-
2
mA VEB=5V, IC=0
*VCE(sat)1
-
-
2
V
IC=3A, IB=16mA
*VCE(sat)2
-
-
4
V
IC=5A, IB=20mA
*VBE(sat)
-
-
4
V
IC=5A, IB=50mA
*VBE(on)
-
-
2.5
V
VCE=3V, IC=3A
*hFE1
1
-
-
K
VCE=3V, IC=500mA
*hFE2
1
-
-
K
VCE=3V, IC=3A
Cob
-
-
200
pF
VCB=10V, f=1MHz
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GI122
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