GI1182 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP SILICON EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GI1182
PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Description
The GI1182 is designed for medium power amplifier applications.
Features
Ô¦Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF.
0.60
0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse, Pw=100ms)
IC
Total Power Dissipation(TC=25к)
PD
Ratings
+150
-55~+150
-40
-32
-5
-2
-3
10
Unit
к
к
V
V
V
A
A
W
Electrical Characteristics (Ta = 25к, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-50uA , IE=0
BVCEO
BVEBO
-32
-
-
V
IC=-1mA, IB=0
-5
-
-
V
IE=-50uA ,IC=0
ICBO
-
-
-1
uA
VCB=-20V, IE=0
IEBO
*VCE(sat)
-
-
-1
uA
VEB=-4V, IC=0
-
-500
-800
mV IC=-2A, IB=-200mA
*hFE
82
-
390
VCE=-3V, IC=-500mA
fT
-
100
-
MHz VCE=-5V, IC=-500mA, f=100MHz
Cob
-
50
-
pF
VCB=-10V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
GI1182
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