GE13007 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR

ISSUED DATE :2005/01/12
REVISED DATE :
GE13007
NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Description
The GE13007 is designed for electronic transformers and power switching circuit applications.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation at Tc=25к
Tstg
VCBO
VCEO
VEBO
IC
PD
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
Unit
+150
ć
-55 ~ +150
ć
700
V
400
V
9
V
8
A
80
W
Electrical Characteristics(Tc = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Emitter Sustaining Voltage
VCEO(sus)
400
-
-
V IC=10mA , IB=0
Collector-Base Breakdown Voltage
BVCBO
700
-
-
V IC=1mA , IE=0
Emitter-Base Breakdown Voltage
BVEBO
9
-
-
V IE=1mA , IC=0
Collector Cutoff Current
ICBO
-
-
100
A VCB=700V
Collector-Emitter Cutoff Current
ICEO
-
Emitter-Base Cutoff Current
IEBO
-
*VCE(sat)1
-
Collector-Emitter Saturation Voltage
*VCE(sat)2
-
Base-Emitter Saturation Voltage
*VBE(sat)
-
DC Current Gain
*HFE1
8
*HFE2
5
Frequency characteristics
fT
4
Turn-On Time
ton
-
Storage Time
tstg
-
Fall Time
tf
-
-
50
A VCE=400V
-
10
A VEB=7V
-
1.2
V IC=2A, IB=400mA
-
3.0
V IC=8A, IB=2A
-
1.2
V IC=2A, IB=400mA
-
50
VCE=5V, IC=2A
-
-
VCE=5V, IC=5A
-
-
MHz VCE=10V, IC=500mA, f=1MHz
-
1.6
-
3
s VCC=125V, IC=5A, IB1=IB2=0.4A
-
0.7
*Pulse Test: Pulse Width=300 s, Duty CycleЉ˅%
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