GDBAT54 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT SCHOTTKY BARRIER DIODE

ISSUED DATE :2005/01/05
REVISED DATE :
G D B AT 5 4
S U RFAC E MO U NT, S CH OTT K Y B AR R I ER D IO DE
VOLTAGE 30V, CURRENT 200mA
Description
The GDBAT54 is designed for high speed switching applications circuit protection, and voltage clamping.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Peak Repetitive Reverse Voltage
VR
Forward Continuous Current
IF
Peak Repetitive Forward Current
IFRM
Surge Forward Current(tЉ1.0s)
IFSM
Total Power Dissipation at Ta = 25к
PD
Characteristics at Ta = 25к
characteristics
Symbol
Min
Reverse Breakdown Voltage
V(BR)R
30
VF(1)
-
VF(2)
-
Forward Voltage
VF(3)
-
VF(4)
-
VF(5)
-
Reverse Leakage Current
IR
-
Total Capacitance
CT
-
Reverse Recover Time
Trr
-
Max.
-
240
320
400
500
1000
2.0
10
5
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
Ratings
Unit
-55 ~ +125
ć
-55 ~ +150
ć
30
V
200
mA
300
mA
600
mA
225
mW
Unit
Test Conditions
V
IR=10 A
mV IF=0.1mA
mV IF=1mA
mV IF=10mA
mV IF=30mA
mV IF=100mA
A VR=25V
pF
VR=1V, f=1MHz
ns
IF=IR=10mA, IR(Rec)=1mA
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