GDBAS16 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

CORPORATION ISSUED DATE :2006/12/12
REVISED DATE :
GDBAS16
SURFACE MOUNT, SWITCHING DIODE
VOLTAGE 85V, CURRENT 250mA
Description
The GDBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
Absolute Maximum Ratings at TA = 25к
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Repetitive Reverse Voltage
Forward Current
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
Symbol
Tj
Tstg
VR
VRRM
IO
IFM
IFSM
PD
Ratings
+150
-65 ~ +150
85
85
250
500
1000
225
Unit
к
к
V
V
mA
mA
mA
mW
Electrical Characteristics (at TA = 25к unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
85
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
Forward Voltage
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
1
uA
VR=85V
Total Capacitance
CT
2
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
6
nS
IF=IR=10mA, RL=100 measured at IR=1mA
GDBAS16
Page: 1/2