GD751SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT SCHOTTKY BARRIER DIODE

GD751SD
ISSUED DATE :2004/09/20
REVISED DATE :
S U RFAC E MO U NT, S CH OTT K Y B AR R IE R DI OD E
VOLTAGE 40V, CURRENT 0. 03A
Description
The GD751SD is designed for high speed switching for detection and high reliability.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
ć
Storage Temperature
Tstg
-40 ~ +125
ć
Maximum Peak Repetitive Reverse Voltage
VRRM
40
V
Maximum RMS Voltage
VRMS
28
V
Maximum DC Blocking Voltage
VDC
40
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
IFSM
0.2
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
pF
Maximum Average Forward Rectified Current
Io
0.03
A
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25к
Characteristics
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
VF
0.37
V
IR
0.5
uA
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.
2. ESD sensitive product handling required.
Test Condition
IF = 1mA
VR = 30V
1/2