GD511 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

ISSUED DATE :2004/11/30
REVISED DATE :
GD511
SU RFAC E MO U NT, SWIT C H IN G DIO D E
VOLTAGE 85V, CURRENT 0. 1A
Description
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current(10ms)
Total Power Dissipation
Electrical Characteristics at Ta = 25к
Characteristic
Symbol
Min.
Typ.
Forward Voltage
VF(1)
-
0.6
VF(2)
-
0.7
VF(3)
-
0.9
Reverse Current
IR
-
-
Total Capacitance
CT
-
2.2
Reverse Recovery Time
Trr
-
1.6
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
Symbol
Tj
Tstg
VRM
VR
IFM
IO
IFSM
PD
Ratings
+150
-55 ~ +150
85
80
300
100
2
150
Unit
ć
ć
V
V
mA
mA
A
mW
Max.
-
-
1.2
0.5
4.0
4.0
Unit
V
V
V
A
pF
nS
Test Conditions
IF=1mA
IF=10mA
IF=100mA
VR=80V
VR=0, f=1MHz
IF=10mA
1/2