GD420SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT SCHOTTKY BARRIER DIODE

CORPORATION ISSUED DATE :2005/12/20
REVISED DATE :
GD420SD
SURFACE MOUNT, SCHOTTKY BARRIER DIODE
VOLTAGE 40V, CURRENT 0. 1A
Description
The GD420SD is designed for low power rectification.
Package Dimensions
Absolute Maximum Ratings at TA = 25к
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
1.0
6.0
0.1
225
Unit
к
к
V
V
V
A
pF
A
mW
Electrical Characteristics (at TA = 25к unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R
40
-
-
Maximum Instantaneous Forward Voltage
VF
-
-
450
Maximum Average Reverse Current
IR
-
-
1.0
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
Unit
Test Conditions
V IR=100 A
mV IF=10mA
uA VR=10V
GD420SD
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