GD1SS355 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

GD1SS355
ISSUED DATE :2004/09/20
REVISED DATE :
S U R FAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 90V, CURRENT 0. 1A
Description
The GD1SS355 is designed for ultra high speed switching and high reliability with high surge current handling capability.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
к
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note2)
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
TRR
Io
PD
Ratings
+125
-55 ~ +125
90
63
80
0.5
3.0
4.0
0.1
225
Unit
ć
ć
V
V
V
A
pF
nSec
A
mW
Characteristics at Ta = 25к
Characteristics
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
VF
1.20
V
IR
0.1
uA
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.
2. Measured at applied forward current of 10mA and reverse voltage of 6.0 volt.
3. ESD sensitive product handling required.
Test Condition
IF = 100mA
VR = 80V
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