GD103SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

ISSUED DATE :2005/01/10
REVISED DATE :
GD103SD
S U RFAC E MO U NT, S CH OTT K Y B AR R I ER D IO DE
VOLTAGE 40V, CURRENT 350mA
Description
The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time
and low reverse capacitance.
Package Dimensions
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Storage Temperature
Tstg
Peak Repetitive Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current
IF
Repetitive Peak Forward Current(tЉ1.0s)
IFRM
Thermal Resistance Junction to Ambient
R JA
Total Power Dissipation at Ta = 25к
PD
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.85 1.05
0
0.10
0.80 1.00
1.15 1.45
1.60 1.80
2.30 2.70
REF.
L
b
c
Q1
Millimeter
Min. Max.
0.20
0.40
0.25
0.40
0.10
0.18
0.15 BSC.
Ratings
-65 ~ +125
40
28
350
1.5
625
225
Unit
к
V
V
mA
A
к/W
mW
Characteristics at Ta = 25к
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
-
V IR=10 A
Forward Voltage
VF(1)
-
VF(2)
-
-
370
mV IF=20mA
-
600
mV IF=200mA
Reverse Leakage Current
IR
-
-
5.0
A VR=30V
Total Capacitance
Reverse Recover Time
CT
-
5.0
-
pF VR=0V, f=1MHz
Trr
-
10
-
ns IF=IR=200mA, IR(Rec)=20mA, RL=100Ó¨
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