GBC807 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

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GBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Ratings
Unit
+150
ć
-55 ~ +150
ć
-50
V
-45
V
-5
V
-800
mA
225
mW
Characteristics at
Symbol
Min.
BVEBO
-5
BVCEO
-45
BVCES
-50
ICES
-
IEBO
-
*VCE(sat)
-
VBE(on)
-
hFE
100
fT
-
Cob
-
Ta = 25к
Typ.
-
-
-
-
-
-
-
-
100
-
Max.
-
-
-
-100
-100
-700
-1.2
630
-
12
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
IE=-100uA
IC=-10mA
IC=-100uA
VCE=-25V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA
VCE=-1V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0A