GBC337 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN SILICON TRANSISTOR

GBC337
NPN SILICON TRANSISTOR
Description
The GBC337 is designed for drive and output-stages of audio amplifiers.
Features
Ô¦High DC Current Gain: 100~630 @VCE=1V, IC=100mA
Ô¦Complementary to GBC327
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings (TA=25к)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25к
Derate above 25к
PD
Total Device Dissipation @ TC =25к
Derate above 25к
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
50
45
5
800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/к
W
mW/к
к
к/W
к/W
Electrical Characteristics (TA = 25к unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
50
-
-
V
IC=100uA, IE=0
BVCEO
45
-
-
V
IC=10mA, IB=0
BVCES
50
-
-
V
IC=100uA, IE=0
BVEBO
5
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=30V, IE=0
ICES
-
-
100
nA
VCE=45V, VBE=0
IEBO
-
-
100
nA
VEB=4V, IC=0
*VCE(sat)
-
-
0.7
V
IC=500mA, IB=50mA
*VBE(on)
-
-
1.2
V
VCE=1V, IC=300mA
*hFE1
100
-
630
VCE=1V, IC=100mA
*hFE2
60
-
-
VCE=1V, IC=300mA
fT
-
210
-
MHz VCE=5V, IC=10mA, f=100MHz
Cob
-
15
-
pF
VCB=10V, IE=0, f=1MHz
Classification Of hFE1
Rank
A
Range
100 ~ 250
B
160 ~ 400
C
250 ~ 630
*Pulse Test: Pulse WidthЉ380 s, Duty CycleЉ2%
GBC337
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