GBAV70 Datasheet, PDF (1/3 Pages) GTM CORPORATION – consists of two diodes in a plastic surface mount

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G B AV70
Description
The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Current
Repetitive Forward Current
Total Power Dissipation
Symbol
Tj
Tstg
PD
Style : Pin1.Anode 2. Anode 3. Cathode
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF
.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Ratings
Unit
+150
ć
-65~+150
ć
80
V
200
mA
500
mA
225
mW
Characteristics at Ta = 25к
Characteristic
Reverse Breakdown Voltage
Symbol
V(BR)
Min.
80
VF(1)
-
Forward Voltage
VF(2)
-
VF(3)
-
VF(4)
-
Reverse Current
IR
-
Total Capacitance
CT
Reverse Recovery Time
Trr
-
Max.
-
715
855
1100
1300
5
1.5
15
Unit
Test Conditions
V
IR=100uA
mV
IF=1mA
mV
IF=10mA
mV
IF=50mA
mV
IF=100mA
uA
VR=80V
pF
VR=0, f=1MHz
nS
IF=IR=10mA, RL=100Ó¨ measured at
IR=1Ma,VR=5V