GBAV151 Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT,SWITCHING DIODE

G B AV151
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 40V, CURRENT 0. 1A
Description
The GBAV151 is designed for ultra high speed switching application.
Package Dimensions
ISSUED DATE :2005/07/14
REVISED DATE :
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings (At TA = 25к unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Max. Peak Reverse Voltage
VRM
40
V
Max. Reverse Voltage
VR
40
V
Max. Average Forward Rectified Current
Io
100
mA
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp =1.0s
IFSM
225
500
mA
Power Dissipation
PD
225
mW
Junction Temperature
TJ
150
к
Storage Temperature
TSTG
-55 ~ +150
к
Electrical Characteristics (At TA = 25к unless otherwise noted)
Characteristics
Symbol Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
40
-
V
IR=100 A
Forward Voltage
VF
-
1.2
V
IF=100mA
Reverse Voltage Leakage Current
IR
-
100
nA
VR=35V
Diode Capacitance
CD
-
2.0
pF
VR=0V, f=1.0MHz
Reverse Recovery Time (Figure 1)
trr
-
3.0
ns
IF=10mA, VR=6V, RL=100 , Irr=0.1IR
1/2