GBAT34 Datasheet, PDF (1/2 Pages) GTM CORPORATION – Schottky Diode

1/2
G B AT 3 4
Description
Schottky Diode .
Package Dimensions
TPU.34)QBDLBHF*
Style : Pin 1.Anode 2.Cathode 3.Common Connection
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40
-
0.85 1.15
0̓
10̓
Absolute Maximum Ratings
Parameter
Peak forward current
Recurrent Peak Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current at 1 Sec
Typical Junction Capacitance between Terminal(note 1)
Reverse Recovery Time(Note 2)
Operating Temperature Range
Storage Temperature
Total Power Dissipation at Ta = 25к
Symbol
VRRM
VRMS
VDC
Io
IFSM
CJ
TRR
TJ
Tstg
PD
Ratings
200
30
21
30
100
600
10
5.0
+150
-55 ~ +150
150
Unit
mA
V
V
V
mA
mA
pF
nSec
ć
ć
mW
Characteristics at Ta = 25к
characteristics
Symbol Min
Max.
Unit
Maximum Instantaneous Forward Voltage
VF
-
1000
mV
Maximum Average Reverse Current
IR
-
2.0
uA
Note: 1.Measured at 1.0 MHz and applied reverse voltage of 1.0 volts.
2.Measured at applied forward current of 10 mA and reverse current of 10 mA.
3.ESD sensitive product handling required.
IF=100mA
VR=25V
Test Conditions
Characteristics Curve