G8551S Datasheet, PDF (1/2 Pages) GTM CORPORATION – NP EPITAXIAL SILICON TRANSISTOR

ISSUED DATE :2003/11/11
REVISED DATE :2004/11/29B
G8551S
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
Description
The G8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
Features
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complimentary to G8051S
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
-25
V
Collector to Emitter Voltage
VCEO
-20
V
Emitter to Base Voltage
VEBO
-5
V
Collect Current(DC)
IC
-0.7
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
625
mW
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-25
-
-
V
IC=-10uA,IE=0
BVCEO
-20
-
-
V
IC=-1mA,IB=0
BVEBO
-5
-
-
V
IE=-10uA,IC=0
ICBO
-
-
-1
uA
VCB=-20V, IE=0
hFE1
100
-
500
VCE=-1V,IC=-150mA
hFE2
-
100
-
VCE=-1V,IC=-500mA
VCE(sat)
-
-
-0.5
V
lC=-500mA,IB=-50mA
VBE(on)
-
-
-1
V
VCE=-1V,IC=-150mA
VBE
-
-
-1.0
V
VCE=-1V,IC=-10mA
fT
150
-
-
MHz
VCE=-10V,Ic=-20Ma, f=100MHz
Cob
-
10
-
pF
VCB=-10V, IE=0A,f=1MHz
Classification Of hFE1
Rank
Range
C
100-180
D
160-300
E
280-500
G8551S
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