G8550S Datasheet, PDF (1/3 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
G8550S
PNP EPITAXIAL PLANAR TANSISTOR
Description
The G8550S is designed for general purpose amplifier applications.
Features
* High DC Current gain: 100-500 at IC= 150mA
*Complementary to G8050S
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
V
V
V
uA
V
V
MHz
pF
Classification Of hFE1
Rank
Range
C
100-180
D
160-300
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
-25
V
-20
V
-5
V
-700
mA
625
mW
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, , IC=0
VCE=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
E
250-500
G8550S
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