G8050S Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL TRANSISTOR

G8050S
CORPORATION ISSUED DATE :2004/04/22
REVISED DATE :2004/11/29B
NPN EPITAXIAL TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
Description
The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
Features
*Collector current up to 700mA
*Collector –Emitter voltage up to 20V
*Complementary to G8550S
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
5
V
Collect Current(DC)
IC
0.7
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
625
mW
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
25
-
-
V
IC=10uA,IE=0
BVCEO
20
-
-
V
IC=1mA,IB=0
BVEBO
5
-
-
V
IE=10uA,IC=0
ICBO
-
-
1
uA
VCB=20V, IE=0
IEBO
-
100
nA
VBE=6V,Ic=0
hFE1
100
-
400
VCE=1V,IC=150mA
hFE2
-
100
-
VCE=1V,IC=150mA
VCE(sat)
-
-
0.5
V
lC=500mA,IB=50mA
VBE(on)
-
-
1
V
VCE=1V,Ic=150mA
fT
150
-
-
MHz
VCE=10V,Ic=20mA, ,f=100MHz
Cob
-
10
-
pF
VCB=10V, IE=0A,f=1MHz
Classification Of hFE1
Rank
Range
C
100-180
D
160-300
E
250-400
G8050S
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