G706SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.03A

G706SD
1/2
S U R FAC E MO UNT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 40V, CURRENT 0. 03A
Description
The G706SD is designed for general purpose detection and high speed switching.
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Characteristics at Ta = 25к
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
VF
IR
Typ.
0.37
1.0
Ratings
Unit
+125
ć
-40 ~ +125
ć
45
V
32
V
40
V
0.2
A
2.0
pF
0.03
A
225
mW
Unit
Test Condition
V
IF = 1mA
uA
VR = 10V