G494SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.4A

G494SD
CORPORATION ISSUED DATE :2004/11/18
REVISED DATE :
S U R FAC E MO UNT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 40V, CURRENT 0.4A
Description
The G494SD is designed for low power rectification.
Feature
Ô¦Two diode with serial
Ô¦High reliability.
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
к
Storage Temperature
Tstg
-40 ~ +125
к
Maximum Recurrent Peak Reverse Voltage
V_RRM
40
V
Maximum RMS Voltage
V_RMS
28
V
Maximum DC Blocking Voltage
V_DC
25
V
Peak Forward Surge Current at 8.3mSec single half sine-wave
I_FSM
2.0
A
Typical Junction Capacitance between Terminal(Note1)
C_J
20
pF
Maximum Average Forward Rectified Current
Io
0.4
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (At Ta = 25ć unless otherwise noted)
Characteristics
Symbol
Max.
Maximum Instantaneous Forward Voltage
V_F(1)
0.3
Maximum Instantaneous Forward Voltage
V_F(2)
0.5
Maximum Average Reverse Current
IR
70
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 10.0 volts.
2. ESD sensitive product handling required.
Unit
V
V
uA
Test Condition
IF(1) = 10mA
IF(2) = 200mA
VR = 25V
1/2