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G425SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.1A
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G425SD
S U R FAC E MO UNT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 40V, CURRENT 0. 1A
Description
The G425SD is designed for low power rectification.
Package Dimensions
TPU.34)QBDLBHF*
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal
Maximum Average Forward Rectified Current
Total Power Dissipation
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Characteristics at Ta = 25к
Characteristics
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Symbol
VF(1)
VF(2)
IR
Typ.
0.55
0.34
30
Ratings
Unit
+125
ć
-40 ~ +125
ć
40
V
28
V
40
V
1.0
A
6.0
pF
0.1
A
225
mW
Unit
Test Condition
V
IF(1) = 100mA
V
IF(2) = 10mA
uA
VR = 10V