G401SD Datasheet, PDF (1/2 Pages) GTM CORPORATION – SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.2A

CORPORATION ISSUED DATE :2003/06/03
REVISED DATE :2006/05/24B
G401SD
S U RFAC E MO U NT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 30V, CURRENT 0. 2A
Description
The G401SD is high frequency rectification for switching power supply.
Package Dimensions
SOT-23
TPU.34)QBDLBHF*
Absolute Maximum Ratings at TA = 25к
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Ratings
+125
-55 ~ +125
30
21
30
3.0
40
0.2
225
Unit
к
к
V
V
V
A
pF
A
mW
Electrical Characteristics (at TA = 25к unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R
30
-
-
Maximum Instantaneous Forward Voltage
VF
-
-
500
Maximum Average Reverse Current
-
IR
-
-
50
-
100
Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage.
2. ESD sensitive product handling required.
Unit
Test Conditions
V IR=100 A
mV IF=200mA
A VR1=10V
A VR2=30V
G401SD
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