G2SD655 Datasheet, PDF (1/3 Pages) GTM CORPORATION – Silicon NPN Epitaxial

G2SD655
CORPORATION ISSUED DATE :2004/05/24
REVISED DATE :2004/11/29B
Silicon NPN Epitaxial
Application
Low frequency power amplifier, Muting.
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25к)
Parameter
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
5
V
Collect Current(DC)
IC
0.7
A
Collect peak current
IC(peak)
1.0
A
Junction Temperature
Tj
+150
ć
Storage Temperature Range
Tstg
-55 ~ +150
ć
Total Power Dissipation
PD
500
mW
Electrical Characteristics(Ta = 25к)
Symbol
Min.
Typ.
Max.
BVCBO
30
-
-
BVCEO
15
-
-
BVEBO
5
-
-
ICBO
-
-
1.0
VBE
-
-
1.0
VCE(sat)
hFE1 *¹
-
0.15
0.5
250
-
1200
fT
-
250
-
Notes: 1. The G2SD655 is grouped by hFE as follows.
2. Pulse test
Unit
V
V
V
uA
V
V
MHz
Test Conditions
IC=10uA ,IE=0
IC=1mA,RBE=Ќ
IE=10uA,IC=0
VCB=20V, IE=0
VCE=1V,IC=150mA
IC=500mA, IB=50mA *²
VCE=1V, IC=150mA *²
VCE=1V, IC=150mA
Classification of Rank
Rank
D
Range
250-500
E
400-800
F
600-1200
G2SD655
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