G2N7002 Datasheet, PDF (1/3 Pages) GTM CORPORATION – N-CHANNELTRANSISTOR

Pb Free Plating Product
ISSUED DATE :2003/06/27
REVISED DATE :2006/01/17C
G2N7002
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
Description
The G2N7002 is universally used for all commercial-industrial surface mount applications.
Package Dimensions
60V
4.5
500mA
TPU.34)QBDLBHF*
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Operating Junction and Storage Temperature Range
Tj, Tstg
Drain-Source Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (tpЉ50us)
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current ⁽²⁾
VDS
VGS
VGSM
ID
IDM
Power Dissipation
PD
Thermal Resistance ,Junction-to-Ambient
RthJA
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Ratings
-55 ~ +150
60
±20
±40
500
800
225
556
Unit
к
V
V
V
mA
mA
mW
к /W
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Symbol
BV_DSS
V_GS(th)
I_GSS
I_DSS
I_D(ON)
Static Drain-Source on-State Resistance R_DS(ON)
Forward Transconductance
G_FS
Input Capacitance
Ciss
Min.
60
1
-
-
500
-
-
80
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
2.5
±100
1
-
5
4.5
-
50
Unit
V
V
nA
uA
mA
mS
pF
Test Conditions
V_GS=0, I_D=250uA
V_DS=2.5V, I_D=0.25mA
V_GS=±20V, V_DS=0
V_DS=60V, V_GS=0
V_DS=7.5V, V_GS=10V
I_D=50mA, V_GS=5V
I_D=500mA, V_GS=10V
V_DS>2 V_DS(ON), I_D=200mA
Output Capacitance
Reverse Transfer Capacitance
Coss
-
Crss
-
-
25
pF
V_DS=25V, V_GS=0V, f=1MHz
-
5
pF
(1)The Power Dissipation of the package may result in a continuous train current.
(2)Pulse Width Љ300us, Duty cycleЉ2%.
G2N7002
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