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G2N5551 Datasheet, PDF (1/3 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR
CORPORATION ISSUED DATE :2004/06/09
REVISED DATE :2004/11/29B
G2N5551 NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G2N5551 is designed for general purpose switching and amplifier applications.
Features
*Complementary to PNP Type G2N5401
*High Collector – Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA)
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
180
V
160
V
6
V
600
mA
625
mW
Test Conditions
IC=100uA , IE=0
IC=1mA,IB=0
IE=10uA ,IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
Classification OF hFE2
Rank
A
Range
80-200
N
100-250
C
160-400
G2N5551
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