G2N4403 Datasheet, PDF (1/2 Pages) GTM CORPORATION – PNP EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
G2N4403
PNP EPITAXIAL PLANAR TANSISTOR
Description
The G2N4403 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4401
*High Power Dissipation: 625mW at 25к
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-750
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-0.4
-750
-950
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
V
mV
mV
V
MHz
pF
Classification OF hFE4
Rank
Range
A
100-210
B
190-300
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
кʳ
-55 ~ +150
кʳ
-40
V
-40
V
-5
V
-600
mA
625
mW
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCE=-35V, VBE= -0.4V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-15mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-1V, IB=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
G2N4403
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