G2N4401 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION ISSUED DATE :2004/04/23
REVISED DATE :2004/11/29B
G2N4401 _{NPN EPITAXIAL PLANAR TRANSISTOR}
Description
The G2N4401 is designed for general purpose switching and amplifier applications.
Features
*Complementary to G2N4403
*High Power Dissipation: 625mW at 25ć
*High DC Current Gain: 100-300 at 150mA
*High Breakdown Voltage: 40V Min
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings at Ta = 25к
Parameter
Junction Temperature
Symbol
Tj
Storage Temperature
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
VCBO
VCEO
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at Ta = 25к
Symbol
Min.
BVCBO
60
BVCEO
40
BVEBO
5
ICEX
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
750
*VBE(sat)2
-
*hFE1
20
*hFE2
40
*hFE3
80
*hFE4
100
*hFE5
40
fT
250
Cob
-
Classification Of hFE4
Rank
Range
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
A
100-210
B
190-300
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02
-
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
Unit
+150
ć
-55 ~ +150
ć
60
V
40
V
5
V
600
mA
625
mW
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE= 0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IB=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%
G2N4401
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