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G2N3904 Datasheet, PDF (1/2 Pages) GTM CORPORATION – NPN EPITAXIAL PLANAR TRANSISTOR
CORPORATION ISSUED DATE :2003/12/12
REVISED DATE :2005/06/24C
G2N3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The G2N3904 is designed for general purpose switching and amplifier applications.
Features
*Pb-free package are available
*Collector-Emitter Voltage: VCEO=40V
*Collect Dissipation: Pc (max) =625mW
*Complementary to G2N3906
Package Dimensions
D
TO-92
E
S1
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6
V
Collect Current(DC)
IC
200
mA
Junction Temperature
Tj
+150
ć
Storage Temperature Range
TsTG
-55 ~ +150
ć
Total Power Dissipation
PD
625
mW
Electrical Characteristics(Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=10uA , IE=0
BVCEO
40
-
-
V
IC=1mA , IB=0
BVEBO
6
-
-
V
IE=10uA, IC=0
ICEX
-
-
50
nA
VCE=30V, VEB=3V
IEBO
-
-
50
nA
VEB=3V
VCE(sat)1
-
-
200
mV
IC=10mA, IB=1mA
VCE(sat)2
-
-
300
mV
IC=50mA, IB=5mA
VBE(sat)1
650
-
850
mV
IC=10mA, IB=1mA
VBE(sat)2
-
-
950
mV
IC=50mA, IB=5mA
hFE1
40
-
-
VCE=1V, IC=0.1mA
hFE2
70
-
-
VCE=1V, IC=1mA
hFE3
100
-
300
VCE=1V, IC=10mA
hFE4
60
-
-
VCE=1V, IC=50mA
hFE5
30
-
-
VCE=1V, IC=100mA
fT
300
-
-
MHz VCE=20V, IE=-10mA, f=100MHz
Cob
-
-
4
pF
VCB=10V, f=100KHz
Cib
-
-
8
pF
VEB=0.5V, f=100KHz
td
-
-
35
ns
VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
tr
-
-
35
ns
VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA
tstg
-
-
200
ns
VCC=3V, IC=10mA, IB1=-IB2=1mA
tf
-
-
50
ns
VCC=3V, IC=10mA, IB1=-IB2=1mA
G2N3904
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