BC846ALT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current(Peak value)
Emitter Current(Peak value)
Base Current(Peak value)
Symbol
V _CEO
V _CBO
V _EBO
I_C
I _CM
I _EM
I _BM
BC846
65
80
6.0
100
200
200
200
BC847
BC850
45
50
6.0
100
200
200
200
BC848
BC849
30
30
5.0
100
200
200
200
Unit
V
V
V
mAdc
mAdc
mAdc
mAdc
SOLDERING CHARACTERISTICS
Characteristic
Symbol
Solder Heat Resistance
265
Solderability
240 to 265
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR– 5 Board, (1) P_D
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R_θJA
Total Device Dissipation
P_D
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient R_θJA
Junction and Storage Temperature
T_J , T_stg
Unit
°C
°C
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
BC846A,B
65
(I_C = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V_(BR)CEO
45
30
Collector–Emitter Breakdown Voltage
BC846A,B
80
(I_C = 10 µA, V_EB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V_(BR)CES
50
30
Collector–Base Breakdown Voltage BC846A,B
80
(I_C = 10 µA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V_(BR)CBO
50
30
Emitter–Base Breakdown Voltage BC846A,B BC847A,B,C
6.0
(I_E = 1.0 µA)
BC848A,B,C, BC849B,C,
V_(BR)EBO
5.0
BC850B,C
5.0
Collector Cutoff Current
1. FR–5 = 1.0 x 0.75 x 0.062 in
(V_CB = 30 V)
(V_CB = 30 V, T_A = 150°C)
I_CBO
—
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC846ALT1,BLT1
BC847ALT1,BLT1
CLT1 thru
BC850BLT1,CLT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Typ
Max Unit
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
15
nA
—
5.0
µA
M3–1/4