BAP63-03 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon PIN diode

Silicon PIN diode
FEATURES
· High speed switching for RF signals
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
BAP63 – 03
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
I
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s < 90°C
MIN.
–
–
–
-65
-65
MAX.
50
100
500
+150
+150
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
C d diode capacitance
r D diode forward resistance
|s 21| ²
isolation
|s 21| ²
insertion loss
|s 21| ²
insertion loss
|s 21| ²
insertion loss
|s 21| ²
insertion loss
I F =50 mA
V R =35 V
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
V R = 20 V; f = 1 MHz
I F = 0.5 mA; f = 100 MHz; note 1
I F = 1 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
I F = 100 mA; f = 100 MHz; note 1
V R = 0; f = 900 MHz
V R = 0; f = 1800 MHz
V R = 0; f = 2450 MHz
I F = 0.5 mA; f = 900 MHz
I F = 0.5 mA; f = 1800 MHz
I F = 0.5 mA; f = 2450 MHz
I F = 1 mA; f = 900 MHz
I F = 1 mA; f = 1800 MHz
I F = 1 mA; f = 2450 MHz
I F = 10 mA; f = 900 MHz
I F = 10 mA; f = 1800 MHz
I F = 10 mA; f = 2450 MHz
I F = 100 mA; f = 900 MHz
I F = 100mA; f = 1800 MHz
I F = 100 mA; f = 2450 MHz
TYP.
0.95
–
0.4
0.35
0.27
2.5
1.95
1.17
0.9
15.4
10.1
7.8
0.21
0.28
0.38
0.18
0.26
0.35
0.13
0.20
0.30
0.10
0.18
0.28
MAX.
1.1
10
–
–
0.32
3.5
3
1.8
1.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
mA
mW
°C
°C
UNIT
V
nA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
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