EM620FV8BS Datasheet, PDF(9/11 Page) List of Unclassifed Manufacturers – 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM

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EM620FV8BS Datasheet, PDF (9/11 Pages) List of Unclassifed Manufacturers – 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM

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EM620FV8BS Series

Low Power, 256Kx8 SRAM

DATA RETENTION CHARACTERISTICS

Parameter

VCC for Data Retention

Data Retention Current

Chip Deselect to Data Retention Time

Operation Recovery Time

Symbol

VDR

IDR

tSDR

tRDR

Test Condition

ISB1 Test Condition

(Chip Disabled) 1)

VCC=1.5V, ISB1 Test Condition

(Chip Disabled) 1)

See data retention wave form

Min Typ2) Max Unit

1.5

3.6

0.5 5.0

ÂµA

tRC

NOTES

1. See the ISB1 measurement condition of data sheet page 4.

2. Typical value is measured at TA=25oC and not 100% tested.

DATA RETENTION WAVE FORM

Vcc

3.0V

tSDR

2.2V

VDR

CS1

GND

Vcc

3.0V

CS2

VDR

0.4V

GND

tSDR

Data Retention Mode

CS1 > Vcc-0.2V

Data Retention Mode

CS2 < 0.2V

tRDR

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