AUIRF3808 Datasheet, PDF (9/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF3808
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
‚
-

R_G
+
ƒ
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-
+
dv/dt controlled by R_G
Driver same type as D.U.T.
I_SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- ^VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V*
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple  5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 17. For N-channel HEXFET^® power MOSFETs
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