OP16GJ Datasheet, PDF (7/14 Pages) List of Unclassifed Manufacturers – MICROCIRCUIT, LINEAR, JFET-INPUT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

TABLE I. Electrical performance characteristics – Continued.
Conditions 1/ 2/ 3/
Test
Symbol
-55°C ≤ T_A ≤ +125°C
unless otherwise specified
Power supply rejection 4/
ratio
Output short circuit 4/
current
Slew rate 4/
PSRR+ V+ = +10 V to +18 V,
V- = -15 V
PSRR- V- = -10 V to -18 V,
V+ = +15 V
I_SC+
I_SC-
SR
AVCL = +1 V
Gain bandwidth product 4/ GBW
T_A = +25°C, f_O = 100 kHz
Power dissipation 4/
Settling time
P_D
V_O = 0 V, T_A = +25°C
t_S
6/
Group A Device
subgroups type
1
04
Limits
Min Max
86
2,3
85
1
86
2,3
85
1
04
-42
-2
2
42
7
01,04 18.0
8a
10.0
7
02
12.0
8a
7.0
7
03
9.0
8a
5.0
7
01,04 5.5
02
4.0
03
3.0
1
01,02,
210
04
03
240
9,10
All
4
Unit
dB
mA
V/µs
MHz
mW
µs
1/ Unless otherwise specified V_S = ±15 V, R_S = 50 Ω.
2/ Devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation however this device is only tested at the
R level. Pre and post irradiation values are identical unless otherwise specified in table I. When performing post
irradiation electrical measurements for any RHA level, T_A = +25°C.
3/ These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883,
method 1019.
4/ This parameter not tested post irradiation.
5/ Subgroup 3 is guaranteed if not tested.
6/ Subgroup 10 is guaranteed if not tested.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
C
5962-89543
SHEET
7