AUIRFR3504Z Datasheet, PDF (7/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFR3504Z
VDS
L
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
320
ID
280
TOP
5.0A
6.4A
240
BOTTOM 42A
200
160
120
80
40
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
I_AS
Fig 12b. Unclamped Inductive Waveforms
10 V
Q_G
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.5
4.0
3.5
ID = 250µA
3.0
2.5
2.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit
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Fig 14. Threshold Voltage Vs. Temperature
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