NPT1012 Datasheet, PDF (6/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 25W RF Power Transistor

NPT1012
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=225mA, T_A=25°C unless otherwise noted
Figure 12 - Typical CW Performance¹ Over
Voltage in Load-Pull, 900MHz
Figure 13 - Typical CW Performance Over
Voltage in Load-Pull, 2500MHz
Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability
Figure 14 - Typical CW Performance Over
Temperature in Nitronex Test Fixture,
3000MHz
Figure 15 - Quiescent Gate Voltage (V_GSQ)
Required to Reach I_DQ as a Function of
Case Temperature, V_DS = 28V
Figure 16 - MTTF of NRF1 Devices as a Function of
Junction Temperature
NPT1012
Page 6
Figure 17 - Power Derating Curve
NDS-025 Rev. 3, April 2013