FGA15N120ANTDTU Datasheet, PDF (6/10 Pages) List of Unclassifed Manufacturers – NPT Trench Technology, Positive temperature coefficient

Typical Performance Characteristics (Continued)
Figure 13. Gate Charge Characteristics
15
Common Emitter
R = 40Ω
L
T = 25^oC
12 ^C
600V
9
400V
6
Vcc = 200V
3
0
0
20
40
60
80
100
120
Gate Charge, Q [nC]
g
Figure 14. SOA Characteristics
100
Ic M AX (Pulsed)
Ic M AX (Continuous)
10
DC O peration
1
50μs
100μs
1ms
Single N onrepetitive
0.1
Pulse Tc = 25^oC
Curves m ust be derated
linearly with increase
0.01
in tem perature
0.1
1
10
100
Collector - Em itter Voltage, V [V]
CE
1000
Figure 15. Turn-Off SOA
100
10
Safe Operating Area
V = 15V, T = 125^oC
1
GE
C
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 16. Transient Thermal Impedance of IGBT
10
1
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1
10
6
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
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