RFM210W Datasheet, PDF (4/21 Pages) List of Unclassifed Manufacturers – Low-Cost Consumer Electronics Applications

RFM210W/RFM217W
1. Electrical Characteristics
VDD = 3.3 V, T_OP = 25 ℃, F_RF = 433.92 MHz, sensitivities are measured in receiving a PN9 sequence and matching to 50 Ω
impedance, with the BER of 0.1%. All measurements are performed using the board RFM210W/RFM217W-EM V1.0, unless
otherwise noted.
1.1 Recommended Operation Conditions
Table 3. Recommended Operation Conditions
Parameter
Operation Voltage Supply
Operation Temperature
Supply Voltage Slew Rate
Symbol
V_DD
T_OP
Conditions
Min
Typ
1.8
-40
1
Max
Unit
3.6
V
85
℃
mV/us
1.2 Absolute Maximum Ratings
Table 4. Absolute Maximum Ratings^[1]
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
V_DD
-0.3
3.6
V
Interface Voltage
Junction Temperature
Storage Temperature
Soldering Temperature
V_IN
T_J
T_STG
T_SDR
Lasts at least 30 seconds
-0.3 VDD + 0.3
V
-40
125
℃
-50
150
℃
255
℃
ESD Rating^[2]
Latch-up Current
Human Body Model (HBM)
@ 85 ℃
-2
2
kV
-100
100
mA
Notes:
[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
[2]. The RFM210W/RFM217W is high-performance RF integrated circuits with VCON/P pins having an ESD rating < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
Caution! ESD sensitive device. Precaution should be used when handling the device in order
to prevent permanent damage.
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Rev 1.0 | Page 4 / 20