RFM210LW Datasheet, PDF (4/17 Pages) List of Unclassifed Manufacturers – Low-Cost Consumer Electronics Applications

RFM210LW
1. Electrical Characteristics
VDD = 3.3 V, T_OP = 25 ℃, F_RF = 433.92 MHz, sensitivities are measured in receiving a PN9 sequence and matching
to 50 Ω impedance, with the BER of 0.1%. All measurements are performed using the board RFM210LW-EM V1.0,
unless otherwise noted.
1.1 Recommended Operation Conditions
1.2 Absolute Maximum Ratings
Table 3. Absolute Maximum Ratings^[1]
Parameter
Symbol
Conditions
Min Max
Unit
Supply Voltage
V_DD
-0.3
3.6
V
Interface Voltage
V_IN
-0.3 V_DD + 0.3
V
Junction Temperature
Storage Temperature
Soldering Temperature
ESD Rating^[2]
T_J
T_STG
T_SDR
Lasts at least 30 seconds
Human Body Model (HBM)
-40
125
℃
-50
150
℃
255
℃
-2
2
kV
Latch-up Current
Notes:
@ 85 ℃
-100
100
mA
[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device under these conditions is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
[2]. The RFM210LW is high-performance RF integrated circuits with VCON/P pins having an ESD rating < 2
kV HBM. Handling and assembly of this device should only be done at ESD-protected workstations.
Caution! ESD sensitive device. Precaution should be used when
handling the device in order to prevent permanent damage.
E‐mail:[e-mail]
website://www.hoperf.com
Rev 1.0 | Page 4 / 17