IS62C1024AL-35QLI-TR Datasheet, PDF (4/11 Pages) List of Unclassifed Manufacturers – 128K x 8 LOW POWER CMOS STATIC RAM

IS62C1024AL
IS65C1024AL
IS62C1024AL/IS65C1024AL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
-35 ns
-45 ns
Test Conditions
Min. Max.
Min. Max.
Unit
Icc Average operating
CE1 = Vil, CE2 = Vih
Com.
— 25
mA

Current
Vin = Vih or Vil,
Ind.
— 30
I I/O= 0 mA, f=0
Auto.
— 35
Icc1 Vdd Dynamic Operating Vdd = Max., CE1 = Vil
Com.
— 30
mA

Supply Current
Iout = 0 mA,f = fmax
Ind.
— 35
Vin = Vih or Vil
Auto.
— 40
CE2 = Vih
typ.⁽²⁾
— 20
Isb1 TTL Standby Current Vdd = Max.,
Com.
— 1
mA

(TTL Inputs)
Vin = Vih or Vil, CE1 ≥ Vih, Ind.
— 1.5
or CE2 ≤ Vil, f = 0
Auto.
—2
Isb2 CMOS Standby
Vdd = Max.,
Com.
—5
µA
Current (CMOS Inputs) CE1 ≥ Vdd – 0.2V, or
Ind.
— 10
CE2 ≤ 0.2V, Vin ≥ Vdd – 0.2V, Auto.
— 45

or Vin ≤ Vss + 0.2V, f = 0 typ.⁽²⁾
—4
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical Values are measured at Vdd = 5V, Ta = 25^oC and not 100% tested.
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
-35 ns
-45 ns
Min. Max.
Min. Max.
Unit
trc
Read Cycle Time
35 —
45 —
ns
taa
Address Access Time
— 35
— 45
ns
toha
tace1
tace2
tdoe
tlzoe⁽²⁾
thzoe⁽²⁾
tlzce1⁽²⁾
Output Hold Time
CE1 Access Time
CE2 Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE1 to Low-Z Output
3
—
3
—
ns
— 35
— 45
ns
— 35
— 45
ns
— 10
— 20
ns
3
—
5
—
ns
0
10
0
15
ns
3
—
5
—
ns
tlzce2⁽²⁾
CE2 to Low-Z Output
3
—
5
—
ns
thzce⁽²⁾
CE1 or CE2 to High-Z Output
0
10
0
15
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.6
to 2.4V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b.Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. H
06/26/08